Siliup SP012N02AGHTO

Siliup · FETs & Power MOSFETs · MPN SP012N02AGHTO

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Specifications

Drain to Source Voltage120V
Configuration-
Gate Charge(Qg)213nC@10V
Current - Continuous Drain(Id)300A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation320W
Reverse Transfer Capacitance (Crss@Vds)48pF
RDS(on)2.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)12.7nF
TypeN-Channel

Technical details

N-Channel 120V 300A 320W Surface Mount TOLL

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