Siliup · FETs & Power MOSFETs · MPN SP011N03GHTD
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| Drain to Source Voltage | 110V |
|---|---|
| Gate Charge(Qg) | 105nC@0V |
| Output Capacitance(Coss) | 1.067nF |
| Current - Continuous Drain(Id) | 180A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 195W |
| RDS(on) | 3.6mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 35pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 7.162nF |
110V 180A 195W Surface Mount TO-263