Siliup SP011N03AGHTO

Siliup · FETs & Power MOSFETs · MPN SP011N03AGHTO

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Specifications

Drain to Source Voltage110V
Configuration-
Gate Charge(Qg)105nC@10V
Current - Continuous Drain(Id)240A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation260W
RDS(on)3.5mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)35pF
Number1 N-channel
Input Capacitance(Ciss)7.162nF

Technical details

110V 240A 260W Surface Mount TOLL

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