Siliup · FETs & Power MOSFETs · MPN SP011N02GHTF
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| Drain to Source Voltage | 110V |
|---|---|
| Gate Charge(Qg) | 160nC@10V |
| Current - Continuous Drain(Id) | 235A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 270W |
| RDS(on) | 2.2mΩ@10V |
| Number | 1 N-channel |
| Type | N-Channel |
110V 235A 3V 270W 2.2mΩ@10V 1 N-channel N-Channel TO-247 Single FETs, MOSFETs RoHS