Siliup SP011N02AGHTF

Siliup · FETs & Power MOSFETs · MPN SP011N02AGHTF

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Specifications

Gate Charge(Qg)198nC@10V
Drain to Source Voltage110V
Current - Continuous Drain(Id)300A
Output Capacitance(Coss)1.946nF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation310W
Reverse Transfer Capacitance (Crss@Vds)33pF
RDS(on)1.9mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)12.22nF

Technical details

110V 300A 3V 310W 1.9mΩ@10V 1 N-channel TO-247 Single FETs, MOSFETs RoHS

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