Siliup · FETs & Power MOSFETs · MPN SP011N01GHTO
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| Drain to Source Voltage | 110V |
|---|---|
| Gate Charge(Qg) | 216nC@10V |
| Output Capacitance(Coss) | 3.4nF |
| Current - Continuous Drain(Id) | 375A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 396W |
| Reverse Transfer Capacitance (Crss@Vds) | 137pF |
| RDS(on) | 1.1mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 12.7nF |
110V 375A 3V 396W 1.1mΩ@10V 1 N-channel TOLL Single FETs, MOSFETs RoHS