Siliup SP010P80TQ

Siliup · FETs & Power MOSFETs · MPN SP010P80TQ

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Specifications

Drain to Source Voltage100V
Configuration-
Gate Charge(Qg)46nC@10V
Output Capacitance(Coss)129pF
Current - Continuous Drain(Id)23A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.7V
Pd - Power Dissipation96W
Reverse Transfer Capacitance (Crss@Vds)76pF
RDS(on)80mΩ@10V;88mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)3.329nF

Technical details

P-Channel 100V 23A 96W Through Hole TO-220-3L-C

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