Siliup SP010P80TH

Siliup · FETs & Power MOSFETs · MPN SP010P80TH

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Specifications

Drain to Source Voltage100V
Gate Charge(Qg)46nC@10V
Output Capacitance(Coss)129pF
Current - Continuous Drain(Id)20A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.7V
Pd - Power Dissipation70W
Reverse Transfer Capacitance (Crss@Vds)76pF
RDS(on)80mΩ@10V;98mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)3.329nF
TypeP-Channel

Technical details

P-Channel 100V 20A 70W Surface Mount TO-252

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