Siliup SP010P40TQ

Siliup · FETs & Power MOSFETs · MPN SP010P40TQ

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Specifications

Gate Charge(Qg)96nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)35A
Output Capacitance(Coss)177pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.8V
Pd - Power Dissipation94W
RDS(on)40mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)89pF
Number1 P-Channel
Input Capacitance(Ciss)5.414nF
TypeP-Channel

Technical details

100V 35A 1.8V 94W 40mΩ@10V 1 P-Channel P-Channel TO-220-3L Single FETs, MOSFETs RoHS

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