Siliup SP010P40TH

Siliup · FETs & Power MOSFETs · MPN SP010P40TH

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Specifications

Gate Charge(Qg)96nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)177pF
Current - Continuous Drain(Id)32A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.8V
Pd - Power Dissipation86W
Reverse Transfer Capacitance (Crss@Vds)89pF
RDS(on)40mΩ@10V;48mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)5.414nF

Technical details

P-Channel 100V 32A 86W Surface Mount TO-252

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