Siliup · FETs & Power MOSFETs · MPN SP010P35GTH
No reviews yet — be the first to review Siliup SP010P35GTH.
| Gate Charge(Qg) | 24nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 197pF |
| Current - Continuous Drain(Id) | 30A |
| Operating Temperature - | -50℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.6V |
| Pd - Power Dissipation | 125W |
| Reverse Transfer Capacitance (Crss@Vds) | 14pF |
| RDS(on) | 35mΩ@10V;45mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 2.205nF |
100V 30A 125W Surface Mount TO-252