Siliup SP010P190T8

Siliup · FETs & Power MOSFETs · MPN SP010P190T8

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Specifications

Gate Charge(Qg)17.5nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)42pF
Current - Continuous Drain(Id)3.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation2.5W
RDS(on)190mΩ@10V;210mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)38pF
Number1 P-Channel
Input Capacitance(Ciss)1.239nF
TypeP-Channel

Technical details

P-Channel 100V 3.5A 2.5W Surface Mount SOT-89

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