Siliup · FETs & Power MOSFETs · MPN SP010P190T1
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| Drain to Source Voltage | 100V |
|---|---|
| Configuration | - |
| Gate Charge(Qg) | 17.5nC@10V |
| Output Capacitance(Coss) | 42pF |
| Current - Continuous Drain(Id) | 4A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Pd - Power Dissipation | 1.5W |
| Reverse Transfer Capacitance (Crss@Vds) | 38pF |
| RDS(on) | 190mΩ@10V;210mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 1.239nF |
P-Channel 100V 4A 1.5W Surface Mount SOT-23-3L