Siliup · FETs & Power MOSFETs · MPN SP010P16GHTQ
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| Configuration | - |
|---|---|
| Drain to Source Voltage | 100V |
| Gate Charge(Qg) | 98nC@10V |
| Output Capacitance(Coss) | 752pF |
| Current - Continuous Drain(Id) | 60A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 180W |
| Reverse Transfer Capacitance (Crss@Vds) | 296pF |
| RDS(on) | 16mΩ@10V |
| Number | - |
| Input Capacitance(Ciss) | 6.825nF |
P-Channel 100V 60A 180W Through Hole TO-220-3L-C