Siliup SP010P16GHNK

Siliup · FETs & Power MOSFETs · MPN SP010P16GHNK

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Specifications

Output Capacitance(Coss)681pF
Pd - Power Dissipation140W
Configuration-
Drain to Source Voltage100V
Gate Charge(Qg)63nC
Current - Continuous Drain(Id)-
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
RDS(on)16mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)42pF
Number1 P-Channel
Input Capacitance(Ciss)3.786nF

Technical details

140W 100V 3V 16mΩ@10V 1 P-Channel P-Channel PDFN-8L(5x6) Single FETs, MOSFETs RoHS

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