Siliup · FETs & Power MOSFETs · MPN SP010P10GHTD
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| Gate Charge(Qg) | 60nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 1.2nF |
| Current - Continuous Drain(Id) | 120A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 232W |
| Reverse Transfer Capacitance (Crss@Vds) | 26pF |
| RDS(on) | 13mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 13.6nF |
100V 120A 232W Surface Mount TO-263