Siliup · FETs & Power MOSFETs · MPN SP010P09GHTO
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| Configuration | - |
|---|---|
| Drain to Source Voltage | 100V |
| Gate Charge(Qg) | 168nC@10V |
| Output Capacitance(Coss) | 1.2nF |
| Current - Continuous Drain(Id) | 150A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 290W |
| RDS(on) | 9mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 26pF |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 13.6nF |
P-Channel 100V 150A 290W Surface Mount TOLL