Siliup SP010N70TH

Siliup · FETs & Power MOSFETs · MPN SP010N70TH

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Specifications

Drain to Source Voltage100V
Gate Charge(Qg)12nC@10V
Output Capacitance(Coss)55pF
Current - Continuous Drain(Id)15A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.8V
Pd - Power Dissipation40W
Reverse Transfer Capacitance (Crss@Vds)40pF
RDS(on)70mΩ@10V;85mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)1.1nF

Technical details

N-Channel 100V 15A 40W Surface Mount TO-252

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