Siliup SP010N70T8

Siliup · FETs & Power MOSFETs · MPN SP010N70T8

No reviews yet — be the first to review Siliup SP010N70T8.

Specifications

Drain to Source Voltage100V
Configuration-
Gate Charge(Qg)22nC@10V
Output Capacitance(Coss)35pF
Current - Continuous Drain(Id)6A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.8V
Pd - Power Dissipation4W
Reverse Transfer Capacitance (Crss@Vds)30pF
RDS(on)70mΩ@10V;85mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)900pF

Technical details

N-Channel 100V 6A 4W Surface Mount SOT-89-3L

Related FETs & Power MOSFETs