Siliup SP010N70T1

Siliup · FETs & Power MOSFETs · MPN SP010N70T1

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Specifications

Drain to Source Voltage100V
Gate Charge(Qg)22nC@10V
Output Capacitance(Coss)35pF
Current - Continuous Drain(Id)4.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation1.2W
RDS(on)70mΩ@10V;85mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)30pF
Number1 N-channel
Input Capacitance(Ciss)900pF

Technical details

N-Channel 100V 4.5A 1.2W Surface Mount SOT-23-3L

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