Siliup SP010N70DP8

Siliup · FETs & Power MOSFETs · MPN SP010N70DP8

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Specifications

Output Capacitance(Coss)55pF
Pd - Power Dissipation1.3W
Gate Charge(Qg)12nC@10V
Configuration-
Drain to Source Voltage100V
Current - Continuous Drain(Id)4A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.8V
Reverse Transfer Capacitance (Crss@Vds)40pF
RDS(on)70mΩ@10V;85mΩ@4.5V
Number2 N-Channel
Input Capacitance(Ciss)1.1nF

Technical details

N-Channel Array 100V 4A 1.3W Surface Mount SOP-8L

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