Siliup SP010N60GDNK

Siliup · FETs & Power MOSFETs · MPN SP010N60GDNK

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Specifications

Gate Charge(Qg)6.1nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)65pF
Current - Continuous Drain(Id)14A
Operating Temperature --50℃~+150℃
Gate Threshold Voltage (Vgs(th))1.8V
Pd - Power Dissipation47.8W
Reverse Transfer Capacitance (Crss@Vds)9.8pF
RDS(on)60mΩ@10V;70mΩ@4.5V
Number2 N-Channel
Input Capacitance(Ciss)345pF
TypeN-Channel

Technical details

N-Channel 100V 14A 47.8W Surface Mount PDFN-8L(5x6)

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