Siliup SP010N35TH

Siliup · FETs & Power MOSFETs · MPN SP010N35TH

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Specifications

Gate Charge(Qg)45nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)102pF
Current - Continuous Drain(Id)25A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation50W
Reverse Transfer Capacitance (Crss@Vds)63pF
RDS(on)35mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.631nF

Technical details

N-Channel 100V 25A 50W Surface Mount TO-252

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