Siliup SP010N20GTH

Siliup · FETs & Power MOSFETs · MPN SP010N20GTH

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Specifications

Gate Charge(Qg)14.6nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)151pF
Current - Continuous Drain(Id)30A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.8V
Pd - Power Dissipation50W
Reverse Transfer Capacitance (Crss@Vds)9pF
RDS(on)20mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)695pF
TypeN-Channel

Technical details

N-Channel 100V 30A 50W Surface Mount TO-252

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