Siliup SP010N15GTH

Siliup · FETs & Power MOSFETs · MPN SP010N15GTH

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Specifications

Gate Charge(Qg)14nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)356pF
Current - Continuous Drain(Id)40A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.8V
Pd - Power Dissipation65W
RDS(on)15mΩ@10V;18mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)17pF
Number1 N-channel
Input Capacitance(Ciss)1.069nF
TypeN-Channel

Technical details

N-Channel 100V 40A 65W Surface Mount TO-252

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