Siliup SP010N13GTQ

Siliup · FETs & Power MOSFETs · MPN SP010N13GTQ

No reviews yet — be the first to review Siliup SP010N13GTQ.

Specifications

Drain to Source Voltage100V
Gate Charge(Qg)14nC@10V
Output Capacitance(Coss)379pF
Current - Continuous Drain(Id)55A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.8V
Pd - Power Dissipation87W
Reverse Transfer Capacitance (Crss@Vds)17pF
RDS(on)13mΩ@10V;16mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)1.225nF

Technical details

100V 55A 87W Through Hole TO-220-3L

Related FETs & Power MOSFETs