Siliup SP010N110GT8

Siliup · FETs & Power MOSFETs · MPN SP010N110GT8

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Specifications

Drain to Source Voltage100V
Gate Charge(Qg)4.3nC@10V
Output Capacitance(Coss)29pF
Current - Continuous Drain(Id)3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.8V
Pd - Power Dissipation2.6W
RDS(on)110mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)1.4pF
Number1 N-channel
Input Capacitance(Ciss)206pF

Technical details

100V 3A 2.6W Surface Mount SOT-89-3L

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