Siliup · FETs & Power MOSFETs · MPN SP010N110GT1
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| Drain to Source Voltage | 100V |
|---|---|
| Configuration | - |
| Gate Charge(Qg) | 4.3nC@10V |
| Output Capacitance(Coss) | 29pF |
| Current - Continuous Drain(Id) | 3A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.8V |
| Pd - Power Dissipation | 1.2W |
| Reverse Transfer Capacitance (Crss@Vds) | 1.4pF |
| RDS(on) | 110mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 206pF |
100V 3A 1.2W Surface Mount SOT-23-3L