Siliup SP010N10GP8

Siliup · FETs & Power MOSFETs · MPN SP010N10GP8

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Specifications

Gate Charge(Qg)29nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)339pF
Current - Continuous Drain(Id)12A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.9V
Pd - Power Dissipation3.5W
RDS(on)10mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)22pF
Number1 N-channel
Input Capacitance(Ciss)1.635nF
TypeN-Channel

Technical details

N-Channel 100V 12A 3.5W Surface Mount SOP-8L

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