Siliup · FETs & Power MOSFETs · MPN SP010N08GTQ
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| Gate Charge(Qg) | 14nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 339pF |
| Current - Continuous Drain(Id) | 65A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.9V |
| Pd - Power Dissipation | 110W |
| Reverse Transfer Capacitance (Crss@Vds) | 22pF |
| RDS(on) | 8.5mΩ@10V;11mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.635nF |
| Type | N-Channel |
N-Channel 100V 65A 110W Through Hole TO-220-3L