Siliup SP010N08GTH

Siliup · FETs & Power MOSFETs · MPN SP010N08GTH

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Specifications

Gate Charge(Qg)14nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)339pF
Current - Continuous Drain(Id)65A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.9V
Pd - Power Dissipation95W
Reverse Transfer Capacitance (Crss@Vds)22pF
RDS(on)8.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.635nF

Technical details

100V 65A 95W Surface Mount TO-252

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