Siliup SP010N07GHTH

Siliup · FETs & Power MOSFETs · MPN SP010N07GHTH

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Specifications

Drain to Source Voltage100V
Gate Charge(Qg)35nC@10V
Output Capacitance(Coss)330pF
Current - Continuous Drain(Id)80A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation120W
RDS(on)6.9mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)7pF
Number1 N-channel
Input Capacitance(Ciss)2.335nF
TypeN-Channel

Technical details

N-Channel 100V 80A 120W Surface Mount TO-252

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