Siliup SP010N07AGTQ

Siliup · FETs & Power MOSFETs · MPN SP010N07AGTQ

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Specifications

Drain to Source Voltage100V
Gate Charge(Qg)67nC@10V
Output Capacitance(Coss)388pF
Current - Continuous Drain(Id)90A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.7V
Pd - Power Dissipation130W
RDS(on)6.7mΩ@10V;8.7mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)12pF
Number1 N-channel
Input Capacitance(Ciss)1.942nF
TypeN-Channel

Technical details

N-Channel 100V 90A 130W Through Hole TO-220-3L

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