Siliup SP010N07AGTH

Siliup · FETs & Power MOSFETs · MPN SP010N07AGTH

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Specifications

Drain to Source Voltage100V
Gate Charge(Qg)67nC@10V
Output Capacitance(Coss)388pF
Current - Continuous Drain(Id)80A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.7V
Pd - Power Dissipation100W
RDS(on)6.7mΩ@10V;8.7mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)12pF
Number1 N-channel
Input Capacitance(Ciss)1.942nF
TypeN-Channel

Technical details

N-Channel 100V 80A 100W Surface Mount TO-252

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