Siliup SP010N06GNK

Siliup · FETs & Power MOSFETs · MPN SP010N06GNK

No reviews yet — be the first to review Siliup SP010N06GNK.

Specifications

Output Capacitance(Coss)453pF
Pd - Power Dissipation102W
Configuration-
Drain to Source Voltage100V
Gate Charge(Qg)38nC
Current - Continuous Drain(Id)-
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.7V
Reverse Transfer Capacitance (Crss@Vds)15pF
RDS(on)5.9mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.252nF

Technical details

102W 100V 1.7V 5.9mΩ@10V 1 N-channel N-Channel PDFN-8L(5x6) Single FETs, MOSFETs RoHS

Related FETs & Power MOSFETs