Siliup · FETs & Power MOSFETs · MPN SP010N06BGTQ
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| Gate Charge(Qg) | 60nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 729pF |
| Current - Continuous Drain(Id) | 110A |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 125W |
| RDS(on) | 10mΩ@4.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 25.6pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.312nF |
| Type | N-Channel |
N-Channel 100V 110A 125W Through Hole TO-220-3L