Siliup · FETs & Power MOSFETs · MPN SP010N04BGTD
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| Gate Charge(Qg) | 42nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 1.125nF |
| Current - Continuous Drain(Id) | 125A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.8V |
| Pd - Power Dissipation | 185W |
| Reverse Transfer Capacitance (Crss@Vds) | 24pF |
| RDS(on) | 4.9mΩ@10V;6.4mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.97nF |
| Type | N-Channel |
N-Channel 100V 125A 185W Surface Mount TO-263