Siliup SP010N04BGNK

Siliup · FETs & Power MOSFETs · MPN SP010N04BGNK

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Specifications

Gate Charge(Qg)42nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)1.125nF
Current - Continuous Drain(Id)100A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.8V
Pd - Power Dissipation150W
Reverse Transfer Capacitance (Crss@Vds)24pF
RDS(on)4.5mΩ@10V;6mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)2.97nF
TypeN-Channel

Technical details

N-Channel 100V 100A 150W Surface Mount PDFN-8L(5x6)

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