Siliup · FETs & Power MOSFETs · MPN SP010N04AGHTQ
No reviews yet — be the first to review Siliup SP010N04AGHTQ.
| Configuration | - |
|---|---|
| Drain to Source Voltage | 100V |
| Gate Charge(Qg) | 69nC@10V |
| Output Capacitance(Coss) | 658pF |
| Current - Continuous Drain(Id) | 130A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 180W |
| RDS(on) | 4.2mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 26pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.251nF |
100V 130A 180W Through Hole TO-220-3L