Siliup SP010N04AGHTD

Siliup · FETs & Power MOSFETs · MPN SP010N04AGHTD

No reviews yet — be the first to review Siliup SP010N04AGHTD.

Specifications

Gate Charge(Qg)69nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)658pF
Current - Continuous Drain(Id)130A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation180W
Reverse Transfer Capacitance (Crss@Vds)26pF
RDS(on)3.9mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)4.251nF

Technical details

100V 130A 180W Surface Mount TO-263

Related FETs & Power MOSFETs