Siliup SP010N03BGHTF

Siliup · FETs & Power MOSFETs · MPN SP010N03BGHTF

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Specifications

Gate Charge(Qg)90nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)1.361nF
Current - Continuous Drain(Id)210A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.8V
Pd - Power Dissipation235W
Reverse Transfer Capacitance (Crss@Vds)8.5pF
RDS(on)3.2mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)4.396nF
TypeN-Channel

Technical details

N-Channel 100V 210A 235W Through Hole TO-247

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