Siliup · FETs & Power MOSFETs · MPN SP010N03BGHTD
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| Gate Charge(Qg) | 90nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 1.361nF |
| Current - Continuous Drain(Id) | 170A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.7V |
| Pd - Power Dissipation | 205W |
| Reverse Transfer Capacitance (Crss@Vds) | 8.5pF |
| RDS(on) | 3.2mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.396nF |
| Type | N-Channel |
N-Channel 100V 170A 205W Surface Mount TO-263