Siliup SP010N03AGHTD

Siliup · FETs & Power MOSFETs · MPN SP010N03AGHTD

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Specifications

Gate Charge(Qg)105nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)1.067nF
Current - Continuous Drain(Id)180A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation280W
Reverse Transfer Capacitance (Crss@Vds)35pF
RDS(on)2.8mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)7.162nF
TypeN-Channel

Technical details

N-Channel 100V 180A 280W Surface Mount TO-263

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