Siliup · FETs & Power MOSFETs · MPN SP010N02GHTO
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| Gate Charge(Qg) | 160nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 1.608nF |
| Current - Continuous Drain(Id) | 260A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 280W |
| Reverse Transfer Capacitance (Crss@Vds) | 75pF |
| RDS(on) | 2mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 9.625nF |
100V 260A 280W Surface Mount TOLL