Siliup · FETs & Power MOSFETs · MPN SP010N02GHTF
No reviews yet — be the first to review Siliup SP010N02GHTF.
| Gate Charge(Qg) | 156nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 2.034nF |
| Current - Continuous Drain(Id) | 300A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.7V |
| Pd - Power Dissipation | 300W |
| Reverse Transfer Capacitance (Crss@Vds) | 48pF |
| RDS(on) | 1.7mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 13.42nF |
100V 300A 300W Through Hole TO-247