Siliup · FETs & Power MOSFETs · MPN SP010N02GHTD
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| Gate Charge(Qg) | 156nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 2.034nF |
| Current - Continuous Drain(Id) | 270A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.7V |
| Pd - Power Dissipation | 260W |
| Reverse Transfer Capacitance (Crss@Vds) | 48pF |
| RDS(on) | 1.9mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 13.42nF |
100V 270A 260W Surface Mount TO-263