Siliup SP010N02BGHTQ

Siliup · FETs & Power MOSFETs · MPN SP010N02BGHTQ

No reviews yet — be the first to review Siliup SP010N02BGHTQ.

Specifications

Gate Charge(Qg)158nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)1.489nF
Current - Continuous Drain(Id)220A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3.2V
Pd - Power Dissipation230W
Reverse Transfer Capacitance (Crss@Vds)72pF
RDS(on)2.7mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)11.531nF
TypeN-Channel

Technical details

N-Channel 100V 220A 230W Through Hole TO-220-3L

Related FETs & Power MOSFETs