Siliup · FETs & Power MOSFETs · MPN SP010N02BGHTO
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| Gate Charge(Qg) | 160nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 260A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.2V |
| Pd - Power Dissipation | 280W |
| RDS(on) | 1.8mΩ@10V |
| Number | 1 N-channel |
| Type | N-Channel |
100V 260A 3.2V 280W 1.8mΩ@10V 1 N-channel N-Channel TOLL Single FETs, MOSFETs RoHS