Siliup · FETs & Power MOSFETs · MPN SP010N02BGHTF
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| Gate Charge(Qg) | 158nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 1.876nF |
| Current - Continuous Drain(Id) | 235A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.2V |
| Pd - Power Dissipation | 280W |
| Reverse Transfer Capacitance (Crss@Vds) | 35pF |
| RDS(on) | 2mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 10.256nF |
| Type | N-Channel |
N-Channel 100V 235A 280W Through Hole TO-247