Siliup SP010N02BGHTD

Siliup · FETs & Power MOSFETs · MPN SP010N02BGHTD

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Specifications

Gate Charge(Qg)158nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)1.876nF
Current - Continuous Drain(Id)220A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3.2V
Pd - Power Dissipation240W
Reverse Transfer Capacitance (Crss@Vds)35pF
RDS(on)2.1mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)10.256nF
TypeN-Channel

Technical details

N-Channel 100V 220A 240W Surface Mount TO-263

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